• DocumentCode
    2498068
  • Title

    Dielectric property of sol-gel SiO2 thin film

  • Author

    Shoubin, Zhang ; Xinsheng, Wang ; Yoshimura, Noboru

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Akita Univ., Japan
  • fYear
    1998
  • fDate
    27-30 Sep 1998
  • Firstpage
    43
  • Lastpage
    46
  • Abstract
    This study attempts to formulate dielectric properties of SiO2 films deposited by hydrochloric acid catalyzed sol-gel solution. This solution, with H2O:TEOS ratio between 10 and 15, is reported forming high density, small pore size film needing a low sintering temperature. Moreover, carbon in this kind of film is also easier to be burn off than that in the base catalyzed films. To elucidate the mechanism of dielectric dispersion in low temperature (800°C) annealed samples, chemical composition and physical structure of the annealed oxide are analyzed. In addition, the effect of environment moisture is also investigated
  • Keywords
    annealing; crystal microstructure; dielectric thin films; liquid phase deposition; permittivity; porous materials; silicon compounds; sintering; sol-gel processing; 800 C; H2O:TEOS ratio; SiO2; chemical composition; dielectric dispersion; dielectric properties; dielectric property; environment moisture; high density; hydrochloric acid catalyzed sol-gel solution; low sintering temperature; physical structure; small pore size film; sol-gel SiO2 thin film; Annealing; Dielectric constant; Dielectric losses; Dielectric thin films; Frequency; Humidity; Moisture; Polarization; Temperature dependence; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
  • Conference_Location
    Toyohashi
  • Print_ISBN
    4-88686-050-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1998.741680
  • Filename
    741680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498068