DocumentCode
2498144
Title
Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films
Author
Nishikawa, H. ; Fukui, H. ; Watanabe, E. ; Ito, D. ; Seol, K.S. ; Ohki, Y.
Author_Institution
Dept. of Electr. Eng., Tokyo Metropolitan Univ., Japan
fYear
1998
fDate
27-30 Sep 1998
Firstpage
59
Lastpage
62
Abstract
The purpose of this paper is to characterize the point defects in a-SiO2 films including thermal a-SiO2 and those prepared by the PE-CVD and SIMOX techniques. Particular emphasis is placed on the results of PL and ESR in thermal a-SiO2 films implanted with B or P ions. The PL decay characteristics are also compared with those observed for other types of a-SiO2 prepared by the PE-CVD and SIMOX techniques
Keywords
SIMOX; amorphous state; boron; dielectric thin films; noncrystalline defects; paramagnetic resonance; phosphorus; photoluminescence; plasma CVD coatings; point defects; radiative lifetimes; silicon compounds; ESR; PE-CVD; PL decay characteristics; SIMOX techniques; SiO2:B,P; a-SiO2 films; amorphous SiO2 films; defects; electron-spin-resonance; photoluminescence; point defects; thermal a-SiO2; Amorphous materials; Atmospheric measurements; Optical films; Paramagnetic resonance; Photoluminescence; Plasma measurements; Pulse measurements; Semiconductor films; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location
Toyohashi
Print_ISBN
4-88686-050-8
Type
conf
DOI
10.1109/ISEIM.1998.741684
Filename
741684
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