A study of parasitic effects in MBE-grown InAlAs/InGaAs/InAlAs HEMT´s

Author

Dumas, J.M. ; Audren, P. ; Paugam, J. ; Favennec, M.P. ; Vuchener, C. ; Lecrosnier, D.

Author_Institution

France Telecom, Lannion, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

420

Lastpage

423

Abstract

The InP high electron mobility transistor (HEMT) is an attractive vehicle for the realization of future electronic and optoelectronic integrated circuits (OEICs). However, detrimental effects labeled parasitic effects are a limiting factor for monolithic integration. Molecular beam epitaxy (MBE)-grown lattice-matched InAlAs/InGaAs/InAlAs HEMTs have been investigated. Three major parasitic effects have been studied: the kink, gate and drain lag effects. Electrical measurements and trap characterizations are reported. This study brings further evidence that MBE-grown InP HEMTs are not very sensitive to in-bulk trap-related parasitic effects as opposed to similar GaAs devices. However surface passivation and improvements must be carried out to reduce the gate lag effect

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; passivation; semiconductor device noise; semiconductor growth; InAlAs/InGaAs/InAlAs HEMT´s; MBE; OEICs; detrimental effects; drain lag effects; gate; gate lag effect; high electron mobility transistor; kink; optoelectronic integrated circuits; parasitic effects; semiconductor; surface passivation; trap characterizations; Electric variables measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Integrated circuit measurements; MODFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380594

Filename

380594