Title :
A study of parasitic effects in MBE-grown InAlAs/InGaAs/InAlAs HEMT´s
Author :
Dumas, J.M. ; Audren, P. ; Paugam, J. ; Favennec, M.P. ; Vuchener, C. ; Lecrosnier, D.
Author_Institution :
France Telecom, Lannion, France
Abstract :
The InP high electron mobility transistor (HEMT) is an attractive vehicle for the realization of future electronic and optoelectronic integrated circuits (OEICs). However, detrimental effects labeled parasitic effects are a limiting factor for monolithic integration. Molecular beam epitaxy (MBE)-grown lattice-matched InAlAs/InGaAs/InAlAs HEMTs have been investigated. Three major parasitic effects have been studied: the kink, gate and drain lag effects. Electrical measurements and trap characterizations are reported. This study brings further evidence that MBE-grown InP HEMTs are not very sensitive to in-bulk trap-related parasitic effects as opposed to similar GaAs devices. However surface passivation and improvements must be carried out to reduce the gate lag effect
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; passivation; semiconductor device noise; semiconductor growth; InAlAs/InGaAs/InAlAs HEMT´s; MBE; OEICs; detrimental effects; drain lag effects; gate; gate lag effect; high electron mobility transistor; kink; optoelectronic integrated circuits; parasitic effects; semiconductor; surface passivation; trap characterizations; Electric variables measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Integrated circuit measurements; MODFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Vehicles;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380594
