Microwave power HBT design optimization

Author

Davis, R.G. ; Crouch, M.A.

Author_Institution

DERA Electron. Sector, Malvern, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

61

Lastpage

66

Abstract

A key issue in the design of power microwave HBTs for high efficiency is the gain roll-off as device size is increased. Careful design is required to maintain adequate gain in order that the high power-added efficiency potential of these devices may be realized. This paper reviews the options for finger combination and the mechanisms controlling the gain scaling are quantified by modelling. This insight is then used to optimize the device layout of an improved common-emitter power device structure. Experimental devices have been fabricated and measured. Excellent gain scaling is demonstrated which verifies the design approach

Keywords

bipolar MMIC; design engineering; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; semiconductor device models; sensitivity analysis; 10 GHz; MMIC process; common-emitter power device structure; finger combination; gain roll-off; gain scaling; gain sensitivity analysis; high efficiency; microwave power HBT design optimization; modelling; power-added efficiency; slot via modelling; Design optimization; Feeds; Fingers; Heterojunction bipolar transistors; Microwave devices; Performance gain; Phased arrays; Power amplifiers; Power generation; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668517

Filename

668517