Title :
High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETs
Author :
Adesida, I. ; Nummila, K. ; Tong, M. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 μm T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, gm, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, fT, of 187 GHz are shown. To date, this is the highest fT reported for OMVPE-grown MODFETs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor growth; vapour phase epitaxial growth; 0.15 μm T-gates; 0.15 micron; 1080 mS/mm; 187 GHz; InAlAs-InGaAs; MODFETs; extrinsic transconductance; microwave performance; modulation-doped field effect transistors; semiconductor; unity current-gain cutoff frequency; Arthritis; Doping; Etching; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Resists;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380598
