Title :
Design of dual band SiGe HBT LNA with EM simulation
Author :
Lu, Z.Y. ; Xie, H.Y. ; Zhang, W.R. ; Guo, Z.J. ; Xing, G.H. ; Zhang, Y.J.
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
This paper presents a dual band LNA with 0.35μm SiGe HBT for two standards which can operate at GSM 0.9GHz and WLAN 2.4GHz. Inductor degeneration in emitter is introduced to decouple the noise factor from the input impedance. Current reuse topology is proposed to reduce the power consumption and enhance the transmission gain. The input matching is achieved through serial and parallel LC circuit which can resonate at two frequencies simultaneously. A full electro-magnetic (EM) simulation considering circuit´s parasitic parameters is utilized to decrease the discrepancies between the simulated and measured results, which is always large between the schematic simulation results and real measured data for RFIC. The EM simulation results of this presented design show that transmission gains of 12dB and 14dB, noise figures of 4.2dB and 4.5 dB are achieved respectively at 0.9GHz and 2.4GHz. And both S11 and S22 are below -10dB. The power consumption is 24.5mW under a power supply voltage of 3.5V.
Keywords :
Ge-Si alloys; electromagnetic waves; heterojunction bipolar transistors; low noise amplifiers; radiofrequency integrated circuits; EM simulation; GSM; RFIC; SiGe; WLAN; current reuse topology; dual band HBT LNA; full electromagnetic simulation; gain 12 dB; gain 14 dB; inductor degeneration; input impedance; input matching; noise factor; noise figure 4.2 dB; noise figure 4.5 dB; parasitic parameters; schematic simulation; size 0.35 mum; transmission gain; voltage 3.5 V;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230470
