Theoretical analysis of noise performance of an In0.10Ga 0.90Sb avalanche photodiode

Author

Hussain, Wasim ; Rouf, Vashwar Tajdidur

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2009

fDate

3-5 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

Antimony based materials have the advantage of having the capability of detecting the mid-infrared wavelength (2 to 5 mum) because of its interesting optoelectronic properties. In this paper we have theoretically studied the noise performance of an In_0.10Ga_0.90Sb avalanche photodiode to examine its suitability as a detector in optical receiver units. We show that at optimum gain such a device has a low value of excess noise factor and a moderate signal to noise ratio. For a digital system the device exhibits a very low value of bit error rate which makes it suitable for using as a photo-detector in mid-infrared region.

Keywords

III-V semiconductors; avalanche photodiodes; error statistics; gallium compounds; indium compounds; infrared detectors; optical receivers; p-i-n photodiodes; semiconductor device noise; In_0.10Ga_0.90Sb; antimony based material; avalanche photodiode; bit error rate; digital system; mid-infrared wavelength; noise factor; noise performance; optical receiver; optoelectronic property; photodetector; signal-to-noise ratio; Avalanche photodiodes; Biological materials; Biomedical materials; High speed optical techniques; Ionization; Optical materials; Optical noise; Performance analysis; Semiconductor device noise; Signal to noise ratio; Avalanche Photodiodes; GaSb; InGaSb; p-i-n diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Internet, 2009. AH-ICI 2009. First Asian Himalayas International Conference on

Conference_Location

Kathmandu

Print_ISBN

978-1-4244-4569-1

Electronic_ISBN

978-1-4244-4570-7

Type

conf

DOI

10.1109/AHICI.2009.5340291

Filename

5340291