DocumentCode :
2498344
Title :
Is NMOSFET Hot Carrier Lifetime Degraded By Charging Damage?
Author :
Cheung, K.P. ; Misra, D. ; Steiner, K.G. ; ColonelI, J.I. ; Chang, C.P. ; Lai, W.Y.C. ; Liu, C.T. ; Liu, R. ; Pai, C.S.
Author_Institution :
Lucent Technologies
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
186
Lastpage :
188
Keywords :
CMOS process; CMOS technology; Degradation; Electron traps; Hot carriers; MOSFET circuits; Plasma density; Plasma measurements; Stress; Substrate hot electron injection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596737
Filename :
596737
Link To Document :
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