• DocumentCode
    2498432
  • Title

    Long-wavelength semiconductor lasers for high resolution spectroscopy

  • Author

    Baranov, A.N. ; Imenkov, A.N. ; Sherstnev, V.V. ; Yakovlev, Yu.P.

  • Author_Institution
    URA CNRS, Univ. de Montpellier II, France
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    660
  • Lastpage
    662
  • Abstract
    The authors report an InPAsSb laser for the spectral range of 2.8-3.6 μm for application to diode laser spectroscopy (DLS). For high resolution spectroscopy it is necessary to have single mode or quasi single mode lasers with continuous tuning of the emission wavelength by current or/and by temperature. The important parameter for DLS is the shift of a longitudinal mode position with current and temperature, which is discussed. Good mode structure of the laser emission, relatively high optical power and a possibility of continuous wave operation above liquid nitrogen temperature are the attractive factors for spectroscopy. First experiments showed that the lasers can be successfully used for DLS
  • Keywords
    III-V semiconductors; indium compounds; infrared spectroscopy; laser modes; laser tuning; semiconductor lasers; 2.8 to 3.6 micron; 77 K; InPAsSb laser; continuous tuning; continuous wave operation; diode laser spectroscopy; high optical power; high resolution spectroscopy; laser emission; long wavelength semiconductor laser; longitudinal mode position; quasi single mode lasers; single mode; Diode lasers; Laser modes; Laser tuning; Nitrogen; Optical tuning; Power lasers; Semiconductor lasers; Spectroscopy; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380608
  • Filename
    380608