DocumentCode
2498432
Title
Long-wavelength semiconductor lasers for high resolution spectroscopy
Author
Baranov, A.N. ; Imenkov, A.N. ; Sherstnev, V.V. ; Yakovlev, Yu.P.
Author_Institution
URA CNRS, Univ. de Montpellier II, France
fYear
1993
fDate
19-22 Apr 1993
Firstpage
660
Lastpage
662
Abstract
The authors report an InPAsSb laser for the spectral range of 2.8-3.6 μm for application to diode laser spectroscopy (DLS). For high resolution spectroscopy it is necessary to have single mode or quasi single mode lasers with continuous tuning of the emission wavelength by current or/and by temperature. The important parameter for DLS is the shift of a longitudinal mode position with current and temperature, which is discussed. Good mode structure of the laser emission, relatively high optical power and a possibility of continuous wave operation above liquid nitrogen temperature are the attractive factors for spectroscopy. First experiments showed that the lasers can be successfully used for DLS
Keywords
III-V semiconductors; indium compounds; infrared spectroscopy; laser modes; laser tuning; semiconductor lasers; 2.8 to 3.6 micron; 77 K; InPAsSb laser; continuous tuning; continuous wave operation; diode laser spectroscopy; high optical power; high resolution spectroscopy; laser emission; long wavelength semiconductor laser; longitudinal mode position; quasi single mode lasers; single mode; Diode lasers; Laser modes; Laser tuning; Nitrogen; Optical tuning; Power lasers; Semiconductor lasers; Spectroscopy; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380608
Filename
380608
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