Title :
Optical properties of shallow In1-xGaxAs/In 1-yGayAs superlattices for optoelectronic applications
Author :
Schwedler, R. ; Wolter, Katinka ; Jaekel, C. ; Kersting, R. ; Kohl, A. ; Leo, K. ; Kurz, H.
Author_Institution :
Inst. fuer Halbleitertechnik, Aachen
Abstract :
The authors present detailed photoluminescence, photovoltage, and femtosecond time-resolved luminescence upconversion studies on thin superlattices of type In1-xGaxAs/In0.53Ga0.47 The sample quality, as derived from sputtered neutrals mass spectrometry data and from the spectral linewidths and excitonic enhancement observed in optical spectra is comparable to very high quality In0.53Ga0.47As/InP multiple quantum wells. Spectroscopic results agree well with calculations of the materials band structure predicting a mixed type-I/type-II superlattice band structure. Ultrafast carrier capture of charge carriers into the superlattice states has been demonstrated. The high excitonic enhancement and the low confinement energies of holes in this material system make it well suited for fast electrooptic devices
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; interface states; photoluminescence; photovoltaic effects; semiconductor superlattices; spectral line breadth; time resolved spectra; InGaAs; band structure; excitonic enhancement; fast electrooptic devices; femtosecond time-resolved luminescence upconversion; holes; low confinement energies; mass spectrometry data; mixed type-I/type-II superlattice band structure; optical spectra; optoelectronic applications; photoluminescence; photovoltage; shallow In1-xGaxAs/In1-yGay As superlattices; spectral linewidths; sputtered neutrals; superlattice states; thin superlattices; ultrafast carrier capture; Carrier confinement; Charge carriers; Electrooptic devices; Indium phosphide; Luminescence; Mass spectroscopy; Optical materials; Optical superlattices; Photoluminescence; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380609
