Title :
Crystal growth of low EPD S-doped <100> InP by facet formation
Author :
Hirano, R. ; Kanazawa, T. ; Itoh, Y. ; Itokawa, T. ; Onodera, H. ; Nakamura, M.
Author_Institution :
Nikko Kyodo Co. Ltd., Toda, Saitama, Japan
Abstract :
The authors have developed a modified liquid encapsulated Czochralski method with a double thermal baffle, by which low etch pitch density (EPD) S-doped InP crystals with lower carrier concentration can be grown. The low EPD S-doped InP crystals became rectangular in shape. When the faceted surfaces were clearly seen on the body, the dislocation density decreased drastically. The solid-liquid interface shape of the crystal investigated by A-B etching, scanning photoluminescence and infrared macrograph was flatter than that of the conventional crystals. The facet growth of the {111} planes was observed on the body of the newly developed crystal
Keywords :
III-V semiconductors; carrier density; crystal faces; crystal growth from melt; dislocation density; dislocation etching; indium compounds; photoluminescence; semiconductor growth; sulphur; A-B etching; LEC crystal growth; double thermal baffle; facet formation; facet growth; infrared macrograph; low EPD S-doped <100> InP; low etch pitch density; lower carrier concentration; modified liquid encapsulated Czochralski method; rectangular shape; scanning photoluminescence; solid-liquid interface shape; {111} planes; Area measurement; Chemicals; Crystals; Density measurement; Etching; Furnaces; Indium phosphide; Polarization; Powders; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380611
