• DocumentCode
    2498543
  • Title

    Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

  • Author

    Kato, H. ; Seol, K.S. ; Toyoda, T. ; Ohki, Y.

  • Author_Institution
    Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1998
  • fDate
    27-30 Sep 1998
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    The effects of ozone annealing on the trapping properties of Ta 2O5 deposited by LPCVD have been examined. It is concluded that the ozone annealing efficiently eliminates electron traps existing throughout the Ta2O5 film but generates hole traps. Structural or stoichiometric change induced by the ozone annealing is suggested as a reason
  • Keywords
    MOS capacitors; annealing; electron traps; elemental semiconductors; hole traps; silicon; silicon compounds; stoichiometry; tantalum compounds; LPCVD; MOS capacitor; Ta2O5-Si3N4-Si; charge trapping; electron traps; hole traps; ozone annealing; stoichiometric change; structural change; Annealing; Capacitance; Capacitance-voltage characteristics; Chemical vapor deposition; Electron traps; Hysteresis; Leakage current; MOS capacitors; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
  • Conference_Location
    Toyohashi
  • Print_ISBN
    4-88686-050-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1998.741703
  • Filename
    741703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498543