Title :
Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition
Author :
Kato, H. ; Seol, K.S. ; Toyoda, T. ; Ohki, Y.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
Abstract :
The effects of ozone annealing on the trapping properties of Ta 2O5 deposited by LPCVD have been examined. It is concluded that the ozone annealing efficiently eliminates electron traps existing throughout the Ta2O5 film but generates hole traps. Structural or stoichiometric change induced by the ozone annealing is suggested as a reason
Keywords :
MOS capacitors; annealing; electron traps; elemental semiconductors; hole traps; silicon; silicon compounds; stoichiometry; tantalum compounds; LPCVD; MOS capacitor; Ta2O5-Si3N4-Si; charge trapping; electron traps; hole traps; ozone annealing; stoichiometric change; structural change; Annealing; Capacitance; Capacitance-voltage characteristics; Chemical vapor deposition; Electron traps; Hysteresis; Leakage current; MOS capacitors; Silicon; Voltage;
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
DOI :
10.1109/ISEIM.1998.741703
