DocumentCode :
2498617
Title :
Electrical properties of SCT thin films prepared by RF magnetron sputtering
Author :
Kim, J.S. ; Jung, I.H. ; Kim, C.H. ; Park, Y.P. ; Lee, J.U.
Author_Institution :
Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea
fYear :
1998
fDate :
27-30 Sep 1998
Firstpage :
143
Lastpage :
146
Abstract :
The (Sr0.85Ca0.15)TiO3 (SCT) thin films are deposited on Pt-coated electrodes (Pt/TiN/SiO2/Si) using RF magnetron sputtering at various substrate temperatures. The structural and electrical properties of SCT thin films are influenced by substrate temperature and annealing temperature, respectively. The maximum dielectric constant of thin films is obtained by annealing at 600°C. The dielectric constant changes almost linearly in temperature ranges of -80~+90°C. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 100 kHz. The dielectric constant changes almost linearly in bias voltage ranges of -5~+5 V
Keywords :
annealing; calcium compounds; dielectric losses; dielectric thin films; permittivity; sputter deposition; strontium compounds; (Sr0.85Ca0.15)TiO3; Pt-TiN-SiO2-Si; Pt-coated electrodes; RF magnetron sputtering; annealing temperature; dielectric constant; dielectric loss; substrate temperature; thin films; Annealing; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Magnetic properties; Radio frequency; Sputtering; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
Conference_Location :
Toyohashi
Print_ISBN :
4-88686-050-8
Type :
conf
DOI :
10.1109/ISEIM.1998.741706
Filename :
741706
Link To Document :
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