Electrical properties of SCT thin films prepared by RF magnetron sputtering

Author

Kim, J.S. ; Jung, I.H. ; Kim, C.H. ; Park, Y.P. ; Lee, J.U.

Author_Institution

Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea

fYear

1998

fDate

27-30 Sep 1998

Firstpage

143

Lastpage

146

Abstract

The (Sr_0.85Ca_0.15)TiO₃ (SCT) thin films are deposited on Pt-coated electrodes (Pt/TiN/SiO₂/Si) using RF magnetron sputtering at various substrate temperatures. The structural and electrical properties of SCT thin films are influenced by substrate temperature and annealing temperature, respectively. The maximum dielectric constant of thin films is obtained by annealing at 600°C. The dielectric constant changes almost linearly in temperature ranges of -80~+90°C. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 100 kHz. The dielectric constant changes almost linearly in bias voltage ranges of -5~+5 V

Keywords

annealing; calcium compounds; dielectric losses; dielectric thin films; permittivity; sputter deposition; strontium compounds; (Sr_0.85Ca_0.15)TiO₃; Pt-TiN-SiO₂-Si; Pt-coated electrodes; RF magnetron sputtering; annealing temperature; dielectric constant; dielectric loss; substrate temperature; thin films; Annealing; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Magnetic properties; Radio frequency; Sputtering; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on

Conference_Location

Toyohashi

Print_ISBN

4-88686-050-8

Type

conf

DOI

10.1109/ISEIM.1998.741706

Filename

741706