Title :
Strained layer InxGa1-xAs/GaAs and Inx Ga1-xAs/InyGa1-yP multiple quantum well optical modulators grown by gas-source MBE
Author :
Kim, J.W. ; Chen, C.W. ; Vogt, T.J. ; Woods, L.M. ; Robinson, G.Y. ; Lile, D.L.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Ft. Collins, CO, USA
Abstract :
The first results on low power positive-intrinsic-negative (PIN) diode modulator structures using strained molecular beam epitaxy (MBE) on GaAs are presented. A comparison of transmission, reflection and photocurrent spectra for these nonresonant devices, with those fabricated from InGaAs/GaAs indicates larger modulation with a maximum change in reflection of >42% being observed at 5 V bias at a wavelength of 0.06 μm
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; light transmission; molecular beam epitaxial growth; p-i-n diodes; photoconductivity; reflectivity; semiconductor growth; semiconductor quantum wells; GaAs; InGaAs-GaAs; InGaAs-InGaP; gas-source MBE; low power pin diode; multiple quantum well optical modulators; nonresonant devices; photocurrent spectra; reflection; strained layers; strained molecular beam epitaxy; transmission; Absorption; Buffer layers; Capacitive sensors; Gallium arsenide; Optical buffering; Optical materials; Optical modulation; Optical signal processing; Photoconductivity; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380619
