Title :
A monolithic tunable high-Q InAlAs/n+-InP-HFET resonator
Author :
Nuytkens, Peter R. ; Greenberg, David R. ; Alamo, Jesus A del ; Balboni, Edmund J.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
The authors propose and demonstrate a novel monolithic active resonator network for an integrated band-pass filter application. The resonator´s natural frequency and Q factor are electronically tunable. The resonator circuit was fabricated and tested in a metal-organic chemical vapor deposition (MOCVD)-grown InAlAs/n+-InP-heterostructure FET (HFET) process containing two levels of Au metal interconnect, metal-insulator-metal (MIM) capacitors, mesa etched resistors and HFET diodes. The InP active resonator network achieved a natural frequency resonance of 7.7 GHz and a Q factor of over 3000. This represents two orders of magnitude improvement over prior art
Keywords :
CVD coatings; III-V semiconductors; MMIC oscillators; Q-factor; aluminium compounds; band-pass filters; circuit tuning; field effect transistors; indium compounds; microwave oscillators; 7.7 GHz; Au; Au metal interconnect; HFET; InAlAs-InP; MIM capacitors; MOCVD; Q factor; integrated band-pass filter; mesa etched resistors; monolithic active resonator network; natural frequency resonance; semiconductors; tunable resonator; Band pass filters; Chemical vapor deposition; Circuit testing; HEMTs; Indium compounds; MODFETs; Metal-insulator structures; Q factor; Resonant frequency; Tunable circuits and devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380627
