Title :
Interface roughness scattering in AlAs/InGaAs/AlAs RTD with InAs subwell
Author :
Roblin, Patrick ; Potter, Robert C. ; Fathimulla, Ayub M.
Author_Institution :
Ohio State Univ., Columbus, OH, USA
Abstract :
The authors present simulation results demonstrating the impact of 3D scattering on the I-V characteristics of an InP-based resonant tunneling diode (RTD). Of particular interest is interface-roughness scattering at the InGaAs/AlAs and InGaAs/InAs interfaces. Interface-roughness scattering is found to be the dominant scattering process. For the circuit application considered, interface-roughness scattering is shown to provide an important contribution for shaping the device characteristic
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor device models; 3D scattering; AlAs-InGaAs-InAs-InGaAs-AlAs; I-V characteristics; RTD; interface-roughness scattering; resonant tunneling diode; semiconductors; Acoustic scattering; Circuit simulation; Contracts; Deformable models; Indium gallium arsenide; Indium phosphide; Particle scattering; Phonons; Resonance; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380629
