• DocumentCode
    2498932
  • Title

    Bipolar device design for high density high performance application

  • Author

    Hunt, P.C.

  • Author_Institution
    Plessey Res. Caswell Ltd., Towcester, UK
  • fYear
    1989
  • fDate
    3-6 Dec. 1989
  • Firstpage
    791
  • Lastpage
    794
  • Abstract
    An analysis of a loaded ECL (emitter coupled logic) gate fabricated in a modern bipolar process shows that the delay is dominated equally by intrinsic and extrinsic components. The design of technology to minimize these components is discussed. As device dimensions are reduced the extrinsic delay components dominate; these components can be minimized by optimizing packing density and using reduced ECL voltage swings. It is suggested that circuits of complexity of 100 K gates and delays of less than 20 ps will be possible in the near future.<>
  • Keywords
    VLSI; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; integrated logic circuits; 20 ps; ECL; VLSI; bipolar device design; device dimensions; emitter coupled logic; extrinsic delay; high density high performance; intrinsic delay; load ECL gate; packing density; propagation delay; reduced ECL voltage swings; Boron; Capacitance; Circuits; Delay effects; Helium; Minimization; Performance analysis; Production; Silicon; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1989.74172
  • Filename
    74172