DocumentCode
2498932
Title
Bipolar device design for high density high performance application
Author
Hunt, P.C.
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
791
Lastpage
794
Abstract
An analysis of a loaded ECL (emitter coupled logic) gate fabricated in a modern bipolar process shows that the delay is dominated equally by intrinsic and extrinsic components. The design of technology to minimize these components is discussed. As device dimensions are reduced the extrinsic delay components dominate; these components can be minimized by optimizing packing density and using reduced ECL voltage swings. It is suggested that circuits of complexity of 100 K gates and delays of less than 20 ps will be possible in the near future.<>
Keywords
VLSI; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; integrated logic circuits; 20 ps; ECL; VLSI; bipolar device design; device dimensions; emitter coupled logic; extrinsic delay; high density high performance; intrinsic delay; load ECL gate; packing density; propagation delay; reduced ECL voltage swings; Boron; Capacitance; Circuits; Delay effects; Helium; Minimization; Performance analysis; Production; Silicon; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74172
Filename
74172
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