Title :
MeV ion implantation for electrical isolation of p+ InP epi-layers
Author :
Ridgway, M.C. ; Davies, M. ; Sedivy, J.Z. ; Vandenberg, R. ; Rolfe, S.J. ; Jackman, T.E.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Electrical isolation of p+-InP epi-layers with B, O and Fe ion implantation at MeV energies has been investigated. For each of the three ion species, sheet resistance (Rs) values of 5-8 × 106 Ω/square were attained after post-implant annealing at temperatures between 300-400°C. Rs values were relatively insensitive to ion dose varying by one order of magnitude for an ion dose range of three orders of magnitude. Fe diffusion was apparent at an annealing temperature of 800°C
Keywords :
III-V semiconductors; annealing; boron; diffusion; electric resistance; indium compounds; ion implantation; iron; isolation technology; oxygen; semiconductor doping; semiconductor epitaxial layers; InP:B; InP:Fe; InP:O; annealing; diffusion; electrical isolation; ion implantation; p+ epitaxial layers; semiconductor; sheet resistance; Annealing; Electrical resistance measurement; Etching; Implants; Indium phosphide; Ion implantation; Iron; Optical device fabrication; Temperature distribution; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380636
