Improved Al/InP Schottky barriers by coimplantation of Be/P

Author

Tyagi, Ritu ; Chow, T.P. ; Borrego, J.M. ; Pisarczyk, K.A.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

349

Lastpage

352

Abstract

The development of conventional InP MESFET technology is strongly hampered by the low barrier height (0.3-0.4eV) obtained in InP, due to surface Fermi level pinning, and consequent high reverse leakage currents. As a result, several techniques are being applied to increase the Schottky barrier height on n-InP. The authors present a technique for obtaining improved Al/InP Schottky barriers on n-InP by using coimplantation of Be/P. Schottky barrier heights as high as 0.64 eV have been obtained, along with an ideality factor very close to unity. The reverse leakage current density is also reduced by almost four orders of magnitude

Keywords

Fermi level; III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; beryllium; indium compounds; ion implantation; phosphorus; semiconductor doping; semiconductor-metal boundaries; Al-InP:Be,P; MESFET technology; Schottky barriers; barrier height; ideality factor; ion implantation; reverse leakage currents; semiconductor; surface Fermi level pinning; Application software; Doping; Indium phosphide; Leakage current; Power engineering and energy; Power engineering computing; Schottky barriers; Schottky diodes; Systems engineering and theory; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380638

Filename

380638