Title :
Improved Al/InP Schottky barriers by coimplantation of Be/P
Author :
Tyagi, Ritu ; Chow, T.P. ; Borrego, J.M. ; Pisarczyk, K.A.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The development of conventional InP MESFET technology is strongly hampered by the low barrier height (0.3-0.4eV) obtained in InP, due to surface Fermi level pinning, and consequent high reverse leakage currents. As a result, several techniques are being applied to increase the Schottky barrier height on n-InP. The authors present a technique for obtaining improved Al/InP Schottky barriers on n-InP by using coimplantation of Be/P. Schottky barrier heights as high as 0.64 eV have been obtained, along with an ideality factor very close to unity. The reverse leakage current density is also reduced by almost four orders of magnitude
Keywords :
Fermi level; III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; beryllium; indium compounds; ion implantation; phosphorus; semiconductor doping; semiconductor-metal boundaries; Al-InP:Be,P; MESFET technology; Schottky barriers; barrier height; ideality factor; ion implantation; reverse leakage currents; semiconductor; surface Fermi level pinning; Application software; Doping; Indium phosphide; Leakage current; Power engineering and energy; Power engineering computing; Schottky barriers; Schottky diodes; Systems engineering and theory; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380638
