Title :
Fe and Ti compensation implants into n- and p- In0.52Al 0.48A and p- InP
Author :
Martin, J.M. ; Rao, M.V. ; Boos, J.B. ; Holland, O.W.
Author_Institution :
George Mason Univ., Fairfax, VA, USA
Abstract :
Fe and Ti implantations were performed into n- and p- type InAlAs, respectively. Fe implants suffered a strong out-diffusion during annealing, whereas Ti implants showed only a slight in- and out- diffusion. The crystalline quality of the annealed material was very close to that of the virgin un-implanted sample, and resistivities higher than 106 Ω-cm were obtained. MeV Ti implantations were performed into p-type InP. The Ti implant profiles showed almost no redistribution during annealing and the material had good crystalline quality after annealing. Resistivities near the intrinsic limit for InP were obtained
Keywords :
III-V semiconductors; aluminium compounds; annealing; diffusion; doping profiles; electrical resistivity; indium compounds; ion implantation; iron; semiconductor doping; titanium; In0.52Al0.48As:Fe; In0.52Al0.48As:Ti; InP:Ti; annealing; compensation implants; crystalline quality; implant profiles; in-diffusion; out-diffusion; resistivity; semiconductors; Annealing; Atomic measurements; Conductivity; Implants; Indium compounds; Indium phosphide; Iron; Laboratories; Temperature; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380640
