On the production of semi-insulating buried layers in epitaxially grown InP by Fe ion implantation

Author

Carnera, A. ; Gasparotto, A. ; Caldironi, M. ; Pellegrino, S. ; Tromby, M. ; Vidimari, F. ; Frigeri, C.

Author_Institution

Dipartimento de Fisica, Unita INFM, Univ. di Padova, Italy

fYear

1993

fDate

19-22 Apr 1993

Firstpage

337

Lastpage

340

Abstract

The realization of a semi-insulating buried layer in a InP-based epitaxial structure is discussed by the selective ion implantation of Fe. Results indicate the feasibility of the production of a buried semi-insulating, current-blocking region with the selective implant of Fe into InP followed by an epitaxial overgrowth. The study of the involved physical processes revealed many interesting aspects. A strong difference is evidenced between the annealing behavior of samples implanted above or below the amorphization threshold. Particular attention has been devoted to the study of the solid phase epitaxial growth of the amorphous layer and of the Fe redistribution and segregation mechanisms

Keywords

III-V semiconductors; amorphisation; amorphous semiconductors; annealing; buried layers; indium compounds; ion implantation; iron; segregation; semiconductor doping; semiconductor growth; solid phase epitaxial growth; Fe redistribution; Fe segregation; InP:Fe; amorphization threshold; annealing; current-blocking region; epitaxial overgrowth; epitaxial structure; ion implantation; selective implant; semi-insulating buried layers; semiconductor; solid phase epitaxial growth; Annealing; Chemicals; Indium phosphide; Instruments; Ion implantation; Iron; Performance evaluation; Production; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380641

Filename

380641