Title :
Charge transfer phenomena in semi-insulating InP:Fe
Author :
Wittmann, G. ; Fasbender, R. ; Thoms, M. ; Winnacker, A.
Author_Institution :
Inst. for Mater. Sci., Univ. of Erlangen, Germany
Abstract :
Charge transfer phenomena are studied in semi-insulating InP:Fe. It is shown that the Fe-absorption is changed under exposure to near IR-light due to pumping of charge carriers into traps other than Fe. This process may affect the determination of the Fe-distribution in InP:Fe by optical absorption. From the change in Fe-absorption the absolute concentration of traps can be estimated. The spectral dependence of the charge transfer process reveals that mainly electron traps are active above 80K
Keywords :
III-V semiconductors; absorption coefficients; electron traps; impurity absorption spectra; indium compounds; infrared spectra; iron; light absorption; Fe-absorption; Fe-distribution; IR absorption; InP:Fe; charge transfer; electron traps; semi-insulating; semiconductor; trap concentration; Absorption; Charge carrier processes; Charge carriers; Charge transfer; Electron optics; Electron traps; Indium phosphide; Ionization; Iron; Optical pumping;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380644
