Title :
Nonlinear behavior of InP:Fe under high electric field
Author :
Turki, K. ; Picoli, G. ; Viallet, J.E.
Author_Institution :
France Telecom, CNET, Lannion, France
Abstract :
The I-V characteristics were investigated on both long liquid encapsulated Czochralski (LEC) and short epitaxial semi-insulating (SI) InP:Fe samples. These characteristics show a linear regime at low voltages followed for higher voltages by a nonlinear one and a current breakdown. This has been widely explained by the single injection theory of Lampert and Mark (1970). The authors show that these characteristics are more complicated than previously recognized and exhibit three further features: (1) The nonlinear behavior occurs at a field of 10 kV/cm independent of the temperature, the nature of the contacts, and the sample thickness. (2) A current transient occurs for LEC long samples from this critical field affecting the I-V characteristics. (3) A S-type negative differential conductivity takes place at a higher field. This behavior is explained by a field-enhancement of the deep-level capture cross section and impact-ionization of deep levels
Keywords :
III-V semiconductors; deep levels; electric breakdown; high field effects; impact ionisation; indium compounds; iron; negative resistance; transients; I-V characteristics; InP:Fe; S-type negative differential conductivity; critical field; current breakdown; current transient; deep-level capture cross section; high electric field; impact-ionization; long LEC samples; nonlinear behavior; semiconductor; short epitaxial semi-insulating samples; single injection theory; Breakdown voltage; Charge carrier processes; Conductivity; Electrons; Indium phosphide; Low voltage; Paramagnetic resonance; Photorefractive materials; Tail; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380645
