Title :
Electronic properties of InP grown and annealed under controlled phosphorus atmosphere
Author :
Hirt, G. ; Bornhorst, S. ; Friedrich, J. ; Schäfer, N. ; Müller, G.
Author_Institution :
Inst. fuer Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany
Abstract :
By combining Hall-effect and capacitance methods it is shown that the annealing of InP under a phosphorus atmosphere causes predominantly a reduction of shallow donors, which is most likely correlated with an annihilation of intrinsic defects. Additionally two deep levels with activation energies of about 400 and 600 MeV are created or incorporated in the annealed material. Based on these results the electronic properties of heat treated nominally undoped semi-insulating InP can be explained
Keywords :
Hall effect; III-V semiconductors; annealing; deep levels; impurity states; indium compounds; Hall-effect; InP; annealing; capacitance; controlled P atmosphere; deep levels; semi-insulating; semiconductor; shallow donors; Absorption; Annealing; Atmosphere; Capacitance; Conductivity; Hall effect; Indium phosphide; Neodymium; Optical materials; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380647
