DocumentCode :
249930
Title :
Multi-device Optimization for Scalable DC HEMT Model with Self-Heating Effect
Author :
Karalkar, Sagar ; Prasad, K. ; Yu Zhu ; Mason, Jennifer ; Bartle, Dylan
Author_Institution :
Electr. & Comput. Eng., Univ. of Massachusetts Lowell, Lowell, MA, USA
fYear :
2014
fDate :
9-11 Jan. 2014
Firstpage :
331
Lastpage :
334
Abstract :
This paper presents a new approach for extracting a scalable DC HEMT model. Scaling rules with unknown coefficients are assumed for each size dependent parameter, and the model parameter of different devices is thus correlated. A scalable model can then be extracted by multi-device optimization. The optimization is carried out on five devices with different gate width. In this way, accurate scaling rules for each parameter and very good I-V fittings for each device have been achieved simultaneously.
Keywords :
HEMT integrated circuits; circuit simulation; equivalent circuits; microwave circuits; optimisation; semiconductor device models; I-V fittings; circuit simulation; gate width; microwave circuits; multidevice optimization; scalable DC HEMT model extraction; scaling rules; self-heating effect; semiconductor device modeling; size dependent parameter; Fitting; HEMTs; Integrated circuit modeling; Logic gates; Optimization; Performance evaluation; Thermal resistance; HEMTs; circuit simulation; equivalent circuit; optimization; semiconductor device modeling and switching application; tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Systems, Signal Processing and Computing Technologies (ICESC), 2014 International Conference on
Conference_Location :
Nagpur
Type :
conf
DOI :
10.1109/ICESC.2014.63
Filename :
6745398
Link To Document :
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