Title :
Study of InP MESFETs based on CdOx interfacial layers grown by the adsorption/oxidation method
Author :
Sawatari, H. ; Oyake, M. ; Kainosho, K. ; Okazaki, H. ; Oda, O.
Author_Institution :
Nippon Min. Co. Ltd., Toda, Saitama, Japan
Abstract :
A novel method to fabricate stable Schottky diodes on n-type InP has recently been developed. The method is based on the chemical absorption of a metal and the successive oxidation to grow a very thin metal oxide layer on top of InP substrates. Various metals such as Cd, Zn, Sb and As are examined. It was found that CdOx showed the highest Schottky barrier height with the ideality factor of nearly unity. By using this novel method, preliminary work on InP MESFET fabrication was performed and FET operation was confirmed
Keywords :
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; adsorbed layers; indium compounds; oxidation; FET operation; InP MESFETs; InP substrates; adsorption/oxidation method; chemical absorption; fabricate stable Schottky diodes; highest Schottky barrier height; n-type InP; semiconductor; successive oxidation; very thin metal oxide layer; Absorption; Chemicals; FETs; Fabrication; Indium phosphide; MESFETs; Oxidation; Schottky barriers; Schottky diodes; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380651
