DocumentCode :
2499347
Title :
Microwave method for measurement of metal films on semiconductor substrates
Author :
Usanov, D. ; Skripal, A. ; Abramov, Andrey
Author_Institution :
Saratov State Univ., Russia
fYear :
2004
fDate :
13-17 Sept. 2004
Firstpage :
686
Lastpage :
687
Abstract :
Theoretical end experimental investigations of the interaction of microwave radiation with metal-semiconductor structures have been carried out. The microwave method for measurement of thickness of metal films on semiconductor substrates, which allows monitoring the parameters of metal layers in the thickness range from 5 to 200 nm, is developed and realized.
Keywords :
metallic thin films; microwave measurement; thickness measurement; 5 to 200 nm; 8 to 12 GHz; metal film thickness measurement; metal-semiconductor structures; microwave thickness measurement method; semiconductor substrates; Conductivity measurement; Electromagnetic measurements; Electromagnetic scattering; Electromagnetic waveguides; Microwave measurements; Microwave theory and techniques; Semiconductor films; Semiconductor waveguides; Substrates; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
Type :
conf
DOI :
10.1109/CRMICO.2004.183395
Filename :
1390377
Link To Document :
بازگشت