DocumentCode
2499347
Title
Microwave method for measurement of metal films on semiconductor substrates
Author
Usanov, D. ; Skripal, A. ; Abramov, Andrey
Author_Institution
Saratov State Univ., Russia
fYear
2004
fDate
13-17 Sept. 2004
Firstpage
686
Lastpage
687
Abstract
Theoretical end experimental investigations of the interaction of microwave radiation with metal-semiconductor structures have been carried out. The microwave method for measurement of thickness of metal films on semiconductor substrates, which allows monitoring the parameters of metal layers in the thickness range from 5 to 200 nm, is developed and realized.
Keywords
metallic thin films; microwave measurement; thickness measurement; 5 to 200 nm; 8 to 12 GHz; metal film thickness measurement; metal-semiconductor structures; microwave thickness measurement method; semiconductor substrates; Conductivity measurement; Electromagnetic measurements; Electromagnetic scattering; Electromagnetic waveguides; Microwave measurements; Microwave theory and techniques; Semiconductor films; Semiconductor waveguides; Substrates; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN
966-7968-69-3
Type
conf
DOI
10.1109/CRMICO.2004.183395
Filename
1390377
Link To Document