An edge-coupled receiver OEIC using AlInAs/InGaAs HBTs

Author

Jalali, B. ; Humphrey, D.A. ; Naval, L. ; Montgomery, R.K. ; Levi, A.F.J. ; Sivco, D. ; Dutta, N.K. ; Cho, A.Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

281

Lastpage

284

Abstract

The authors report on a novel edge-coupled optical receiver optoelectronic integrated circuit (OEIC) fabricated in AlInAs/InGaAs heterostructure bipolar transistor (HBT) technology. The edge coupled geometry is compatible with the multi-fiber array connector technology. The receiver consists of a waveguide pin detector, a transimpedance preamplifier and a second voltage amplifier stage. The pin has been realized in a standard HBT layer structure and requires no additional growth or processing steps

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; semiconductor heterojunctions; AlInAs-InGaAs; AlInAs/InGaAs HBTs; edge-coupled receiver OEIC; heterostructure bipolar transistor; multi-fiber array connector technology; optoelectronic integrated circuit; second voltage amplifier stage; semiconductor; transimpedance preamplifier; waveguide pin detector; Bipolar integrated circuits; Bipolar transistors; Coupling circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit technology; Optical receivers; Optical waveguides; Optoelectronic devices; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380655

Filename

380655