Title :
An edge-coupled receiver OEIC using AlInAs/InGaAs HBTs
Author :
Jalali, B. ; Humphrey, D.A. ; Naval, L. ; Montgomery, R.K. ; Levi, A.F.J. ; Sivco, D. ; Dutta, N.K. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The authors report on a novel edge-coupled optical receiver optoelectronic integrated circuit (OEIC) fabricated in AlInAs/InGaAs heterostructure bipolar transistor (HBT) technology. The edge coupled geometry is compatible with the multi-fiber array connector technology. The receiver consists of a waveguide pin detector, a transimpedance preamplifier and a second voltage amplifier stage. The pin has been realized in a standard HBT layer structure and requires no additional growth or processing steps
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; semiconductor heterojunctions; AlInAs-InGaAs; AlInAs/InGaAs HBTs; edge-coupled receiver OEIC; heterostructure bipolar transistor; multi-fiber array connector technology; optoelectronic integrated circuit; second voltage amplifier stage; semiconductor; transimpedance preamplifier; waveguide pin detector; Bipolar integrated circuits; Bipolar transistors; Coupling circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit technology; Optical receivers; Optical waveguides; Optoelectronic devices; Photonic integrated circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380655
