DocumentCode :
2499385
Title :
On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
Author :
Chuang, C.T. ; Lu, P.F.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
1989
fDate :
3-6 Dec. 1989
Firstpage :
799
Lastpage :
802
Abstract :
A detailed study on the scaling property of trench isolation capacitance for advanced high-performance bipolar applications is presented. Using two-dimensional numerical simulations, it is shown that depending on the particular trench used, the trench isolation capacitance has a distinct dependence on the trench width. The impact on the scaled-down high-performance ECL circuits is examined. It is concluded that the design and optimization of scaled-down devices and circuits would require an in-depth understanding of the trench isolation parasitics to realize the full potential of advanced technology.<>
Keywords :
VLSI; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; VLSI; advanced high-performance ECL circuits; optimization; scaled-down devices; scaling property; trench isolation capacitance; trench isolation parasitics; trench width; two-dimensional numerical simulations; Admittance; Circuit optimization; Delay effects; Dielectrics; Filling; Isolation technology; Parasitic capacitance; Performance analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1989.74174
Filename :
74174
Link To Document :
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