Impulse response of the metal-semiconductor-metal photodetector

Author

Averine, S.V. ; Alkeev, N.V.

Author_Institution

Kotel´nikov Inst. of Radioeng. & Electron., Fryazino, Russia

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

55

Lastpage

57

Abstract

Impulse response of the metal-semiconductor-metal (MSM) detectors is analyzed. Effect of optical excitation level on the MSM-photodetector performance is discussed. At low excitation level the detector speed of response is limited by parasitic capacitance of interdigitated diode structure and by the transit time of the photogene-rated carriers. At high excitation levels the detector speed of response is degraded due to the internal field screening caused by the space-charge of the holes.

Keywords

capacitance measurement; metal-semiconductor-metal structures; photodetectors; space charge; transient response; MSM photodetector; field screening; impulse response; interdigitated diode structure; metal-semiconductor-metal; optical excitation level; parasitic capacitance; photogenerated carrier; space charge; Detectors; High speed optical techniques; Integrated optics; Optical detectors; Optical pulses; Optical reflection; Optical saturation; Metal-semiconductor-metal (MSM) diode; impulse response; optical excitation energy; photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2012 6th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4673-1940-9

Type

conf

DOI

10.1109/UWBUSIS.2012.6379730

Filename

6379730