Incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys

Author

Carlin, J.-F. ; Rudra, A. ; Ilegems, M.

Author_Institution

Dept. of Phys., Ecole Polytechnique Federal de Lausanne, Switzerland

fYear

1993

fDate

19-22 Apr 1993

Firstpage

263

Lastpage

266

Abstract

The authors describe quantitatively the incorporation of group III elements during the chemical beam epitaxy (CBE) growth of GaInAsP alloys. They report key parameters that influence CBE growth of GaInAsP alloys when TEGa, TMIn, AsH₃ and PH₃ sources are used in the 480°C-520°C substrate temperature range. The indium incorporation ratio is quasi-insensitive to the growth conditions. In contrast, two main factors must be taken into account for the gallium incorporation. The factors are (1) a strong inhibition due to the presence of indium. This mechanism is not very dependent on the substrate temperature. (2) A strong temperature dependence when phosphorus is present. A set of linear relations to describe these effects is proposed

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; 480 to 520 degC; GaInAsP alloys; chemical beam epitaxy; group III elements; linear relations; semiconductor; strong temperature dependence; substrate temperature; Chemical elements; Epitaxial growth; Gallium alloys; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature measurement; Thickness measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380660

Filename

380660