Title :
Incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys
Author :
Carlin, J.-F. ; Rudra, A. ; Ilegems, M.
Author_Institution :
Dept. of Phys., Ecole Polytechnique Federal de Lausanne, Switzerland
Abstract :
The authors describe quantitatively the incorporation of group III elements during the chemical beam epitaxy (CBE) growth of GaInAsP alloys. They report key parameters that influence CBE growth of GaInAsP alloys when TEGa, TMIn, AsH3 and PH3 sources are used in the 480°C-520°C substrate temperature range. The indium incorporation ratio is quasi-insensitive to the growth conditions. In contrast, two main factors must be taken into account for the gallium incorporation. The factors are (1) a strong inhibition due to the presence of indium. This mechanism is not very dependent on the substrate temperature. (2) A strong temperature dependence when phosphorus is present. A set of linear relations to describe these effects is proposed
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; 480 to 520 degC; GaInAsP alloys; chemical beam epitaxy; group III elements; linear relations; semiconductor; strong temperature dependence; substrate temperature; Chemical elements; Epitaxial growth; Gallium alloys; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature measurement; Thickness measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380660
