DocumentCode
2499484
Title
An investigation of deep levels in InAlAs/n+-InGaAs heterostructure FETs
Author
Dumas, J.M. ; Audren, P. ; Favennec, M.P. ; Lecrosnier, D. ; Bahl, S.R. ; Alamo, J. A del
Author_Institution
France Telecom, Lannion, France
fYear
1993
fDate
19-22 Apr 1993
Firstpage
255
Lastpage
258
Abstract
A deep level investigation has been performed on InAlAs/n+ -InGaAs metal-insulator doped-channel FETs. Two deep levels located in the InAlAs buffer layer have been measured: (i) a hole-like trap, reported for the first time, and (ii) an electron trap, previously identified in the literature. The electron trap was linked to the kink effect. Trap concentrations are low: a maximum measured value of 2×1015 cm-3. This value is about one order of magnitude lower than that usually measured in GaAs buffer layers for similar gate-length devices
Keywords
III-V semiconductors; MISFET; aluminium compounds; deep levels; electron traps; gallium arsenide; hole traps; indium compounds; interface states; semiconductor heterojunctions; InAlAs-InGaAs; InAlAs/n+-InGaAs; buffer layers; deep levels; electron trap; heterostructure FETs; hole-like trap; kink effect; semiconductor; trap concentration; Buffer layers; Electron traps; HEMTs; Indium compounds; Indium phosphide; Insulation; MODFETs; Metal-insulator structures; Microwave FETs; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380662
Filename
380662
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