Title :
Frequency range of Gunn diodes on base of graded-gap semiconductor nitrides
Author :
Storozhenko, I.P. ; Arkusha, Y.V.
Author_Institution :
Karazin Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN, GaInN and BInN. We had obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN, GaInN and BInN diodes are compared with the performances of InN, GaN and AlN diodes.
Keywords :
Gunn diodes; III-V semiconductors; aluminium compounds; boron compounds; cathodes; gallium compounds; indium compounds; AlInN; BInN; GaInN; Gunn diodes; biharmonic modes; cathode contacts; cutoff frequency; graded-gap semiconductor nitrides; harmonic modes; Cathodes; Gallium nitride; Mathematical model; Microwave generation; Power generation; Semiconductor diodes; Gunn diode; Terahertz range; graded-gap semiconductor; intervalley electron transfer; nitride semiconductor; submillimetric; transfer electron device;
Conference_Titel :
Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2012 6th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4673-1940-9
DOI :
10.1109/UWBUSIS.2012.6379733
