Frequency range of Gunn diodes on base of graded-gap semiconductor nitrides

Author

Storozhenko, I.P. ; Arkusha, Y.V.

Author_Institution

Karazin Kharkov Nat. Univ., Kharkov, Ukraine

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

64

Lastpage

66

Abstract

The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN, GaInN and BInN. We had obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN, GaInN and BInN diodes are compared with the performances of InN, GaN and AlN diodes.

Keywords

Gunn diodes; III-V semiconductors; aluminium compounds; boron compounds; cathodes; gallium compounds; indium compounds; AlInN; BInN; GaInN; Gunn diodes; biharmonic modes; cathode contacts; cutoff frequency; graded-gap semiconductor nitrides; harmonic modes; Cathodes; Gallium nitride; Mathematical model; Microwave generation; Power generation; Semiconductor diodes; Gunn diode; Terahertz range; graded-gap semiconductor; intervalley electron transfer; nitride semiconductor; submillimetric; transfer electron device;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2012 6th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4673-1940-9

Type

conf

DOI

10.1109/UWBUSIS.2012.6379733

Filename

6379733