Title :
High quality long wavelength lasers grown by atmospheric pressure MOCVD with liquid group V sources
Author :
Heimbuch, M.E. ; Holmes, A.L., Jr. ; Mack, M.P. ; DenBaars, S.P. ; Coldren, L.A. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput., California Univ., Santa Barbara, CA, USA
Abstract :
The authors have achieved low threshold InxGa1-x As/InP quantum well laser diodes, grown in a non-hydride metalorganic chemical vapor deposition system at atmospheric pressure using tertiarybutylarsine and tertiarybutylphosphine. Broad area laser diodes, emitting at 1.3 μm, with a 1500 Å GaInAsP active region achieved threshold current densities of 1.25 kA/cm2 for 400 micron cavity length. Strained and unstrained quantum wells with luminescence at 1.55 μm have been incorporated into the active regions of laser diodes. Lattice matched In0.53Ga0.47 As/InP single quantum well lasers exhibited extremely low threshold current densities of 220 A/cm2 for broad area devices 3.5 mm in cavity length. Compressively strained 4 quantum wells devices displayed excellent threshold current densities of 300 A/cm2 for 3 mm cavity lengths
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; 1.3 micron; 1500 A; 400 micron; atmospheric pressure MOCVD; liquid group V sources; low threshold InxGa1-xAs/InP quantum well laser diodes; metalorganic chemical vapor deposition system; semiconductor; tertiarybutylarsine; tertiarybutylphosphine; Atmospheric waves; DH-HEMTs; Diode lasers; Doping; Gas lasers; Indium gallium arsenide; Indium phosphide; MOCVD; Solids; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380666
