DocumentCode
2499560
Title
Theory of unidirectional bulk conduction under trap density gradient for resistance switching
Author
Watanabe, Yukio
Author_Institution
Dept. of Phys., Kyushu Univ., Fukuoka, Japan
fYear
2010
fDate
9-12 Aug. 2010
Firstpage
1
Lastpage
4
Abstract
Nonlinear bulk conduction under graded distribution of traps is shown to exhibit well-defined rectification without relying surface barriers [1,2]. This solves a puzzle in the resistance switching that frequently exhibits both unidirectionality (rectification) and bulk-limited conduction characteristics. In addition, it also resolves an old puzzle of nonideal rectifying characteristic showing bulk properties. This paper briefly introduces the theory [1,2] and indicates that a fraction of reported resistance switching phenomena is due to the change of trap distribution. The theory can also be used to identify the ferroelectricity effect on the resistance switching. In addition, the phenomena treated here can be important, because carriers are injected during the polarization switching.
Keywords
bismuth compounds; dielectric polarisation; electrical conductivity; ferroelectric switching; rectification; strontium compounds; BiFeO3; SrTiO3; ferroelectricity effect; polarization switching; rectification; resistance switching; surface barriers; trap density gradient; unidirectional bulk conduction; Crystals; Electrical resistance measurement; Fitting; Gold; Surface resistance; Switches; component; current-voltage characteristics; rectification; resistance swtiching;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics (ISAF), 2010 IEEE International Symposium on the
Conference_Location
Edinburgh
ISSN
1099-4734
Print_ISBN
978-1-4244-8190-3
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2010.5712234
Filename
5712234
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