• DocumentCode
    2499560
  • Title

    Theory of unidirectional bulk conduction under trap density gradient for resistance switching

  • Author

    Watanabe, Yukio

  • Author_Institution
    Dept. of Phys., Kyushu Univ., Fukuoka, Japan
  • fYear
    2010
  • fDate
    9-12 Aug. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Nonlinear bulk conduction under graded distribution of traps is shown to exhibit well-defined rectification without relying surface barriers [1,2]. This solves a puzzle in the resistance switching that frequently exhibits both unidirectionality (rectification) and bulk-limited conduction characteristics. In addition, it also resolves an old puzzle of nonideal rectifying characteristic showing bulk properties. This paper briefly introduces the theory [1,2] and indicates that a fraction of reported resistance switching phenomena is due to the change of trap distribution. The theory can also be used to identify the ferroelectricity effect on the resistance switching. In addition, the phenomena treated here can be important, because carriers are injected during the polarization switching.
  • Keywords
    bismuth compounds; dielectric polarisation; electrical conductivity; ferroelectric switching; rectification; strontium compounds; BiFeO3; SrTiO3; ferroelectricity effect; polarization switching; rectification; resistance switching; surface barriers; trap density gradient; unidirectional bulk conduction; Crystals; Electrical resistance measurement; Fitting; Gold; Surface resistance; Switches; component; current-voltage characteristics; rectification; resistance swtiching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics (ISAF), 2010 IEEE International Symposium on the
  • Conference_Location
    Edinburgh
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-8190-3
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2010.5712234
  • Filename
    5712234