Title :
MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 μm lasers
Author :
Yamamoto, Mitsuo ; Yamamoto, Nono ; Nakano, Junichi
Author_Institution :
NTT Opto-electron. Labs., Atsugi-shi, Kanagawa, Japan
Abstract :
The authors report strained InAsP quantum-well structures emitting at 1.3 μm that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm2 were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-μm wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; waveguide lasers; 1.3 micron; InAsP-InGaAsP; MOVPE growth; laser diode; long wavelength optical device applications; low threshold 1.3 μm lasers; low-pressure metalorganic; ridge stripe waveguide; semiconductor; strained InAsP/InGaAsP quantum-well structures; vapor phase epitaxy; Diode lasers; Epitaxial growth; Epitaxial layers; Optical devices; Optical materials; Optical waveguides; Quantum well lasers; Quantum wells; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380668
