• DocumentCode
    2499614
  • Title

    High performance In0.47Ga0.53As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates

  • Author

    Vilela, M.F. ; Freundlich, A. ; Bensaoula, A. ; Medelci, D.N.

  • Author_Institution
    Space Vacuum Epitaxy Center, Univ. of Houston, TX, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    227
  • Lastpage
    230
  • Abstract
    High performance In0.47Ga0.53As tunnel junctions were successfully realized using chemical beam epitaxy on InP, GaAs and GaAs/Si substrates. The achievement of high performance tunnel junctions, besides extremely high hole and electron concentrations requires low interdiffusion of dopant species in the narrow space-charge region of the junction during the device growth procedure. Therefore a relatively low temperature growth process and a good control of interface properties is required. Using chemical beam epitaxy (CBE) high quality InP and InGaAs can be grown at temperatures substantially lower than those used in more conventional liquid phase epitaxy and metalorganic vapor phase epitaxy techniques rendering CBE specially attractive for such tunnel junction fabrication. The peak currents obtained on samples grown on InP substrates are the highest ever reported for such tunnel junctions. These results demonstrate that CBE is perfectly suited for fabrication of InP/InGaAs tandem solar cells
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; GaAs; In0.47Ga0.53As tunnel junctions; InP; Si; chemical beam epitaxy; device growth procedure; high electron concentration; high hole concentration; interface properties; narrow space-charge region; relatively low temperature growth; semiconductor; Charge carrier processes; Chemicals; Epitaxial growth; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380669
  • Filename
    380669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2499614