Title :
1kW GaN S band radar transistor
Author :
Walker, Julian ; Formicone, Gabriele ; Boueri, Fouad ; Battaglia, Brian
Author_Institution :
Integra Technol., Inc., El Segundo, CA, USA
Abstract :
This paper describes a GaN transistor with 1kW output power for S band radar and other applications. This is believed to be the highest power ever reported from a single-ended transistor at this frequency and is a threefold improvement on the previous best.
Keywords :
III-V semiconductors; UHF transistors; gallium compounds; microwave transistors; radar; GaN; GaN transistor; S band radar; power 1 kW; single-ended transistor; Gain; Gallium nitride; Logic gates; Power generation; Radar; Silicon; Transistors; GaN; S band; radar; transistor;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
Conference_Location :
Tel Aviv
DOI :
10.1109/COMCAS.2013.6685249
