Title :
MOCVD growth of InP by phosphine modulation
Author :
Lee, M.K. ; Hu, C.C. ; Lin, M.H.
Author_Institution :
Inst. of Electr. Eng., Nat. Sun Yat-sen Univ., Koashing, Taiwan
Abstract :
A new epitaxial growth process was developed using phosphine modulation using conventional metal-organic chemical vapor deposition (MOCVD). With this method, phosphine was switched off a short time in each cycle and provided a metal-rich growth surface. With higher surface mobility of indium atoms than that of InP molecules, crystal quality was improved significantly. Photoluminescence full width at half maximum of 5.6 meV at 77 K was achieved under optimum growth conditions
Keywords :
III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; vapour phase epitaxial growth; 77 K; InP; atom surface mobility; epitaxial growth; metal-organic chemical vapor deposition; phosphine modulation; photoluminescence; Atomic beams; Chemical vapor deposition; Epitaxial growth; Indium phosphide; Inductors; MOCVD; Photoluminescence; Rough surfaces; Surface roughness; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380682
