Study on main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by photoreflectance measurements versus temperature

The authors report experimental results on InGaAs/InAlAs single quantum wells (SQW) obtained by photoreflectance between 100 K and 450 K. The ability to perform such optical experiments over a wide range of temperature in this system can yield important information about the main electron-scattering parameters which limit electronic transport in high speed devices, through the study of the broadening parameter Γ versus temperature. The evolution versus temperature of Γ(E₁H₁) and of Γ(E₁H₁ ) and Γ(E₂H₂), respectively in the lattice matched 5 nm and 25 nm SQW are presented. From this study quantitative information is derived about the relative influence of interface roughness, alloy scattering and electron phonon interactions. Studies of the evolution of Γ versus temperature in SQW are reported in InGaAs/InAlAs system. The evolution of Γ versus T of the second optical transition E₂H₂ in a SQW is also reported