Optical characterization of InAlAs/InP single and double heterostructures

Author

Perez, M. A Garcia ; Benyattou, T. ; Tabata, A. ; Guillot, G. ; Sacilotti, M. ; Abraham, P. ; Monteil, Y. ; Tardy, J.

Author_Institution

URA CNRS, INSA de Lyon, Villeurbanne, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

155

Lastpage

158

Abstract

The authors report low temperature photoluminescence studies of single (InP/InAlAs) and double (InP/InAlAs/InP) heterostructures. The samples were grown by atmospheric pressure metal organic vapor phase epitaxy at 650°C. On the single heterostructure, the well known emission was observed at 1.2 eV due to InAlAs on InP type II direct interface. On the double heterostructure, a new emission at 1.3 eV has been observed. The influence of the excitation power and the electric field was investigated on this transition. Optical measurement results are presented carried out on a bevelled sample. The results show that this emission is related to an interface recombination and that both interfaces are not equivalent

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; indium compounds; interface states; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; 1.2 eV; 1.3 eV; 650 degC; InAlAs-InP; InP-InAlAs-InP; atmospheric pressure metal organic vapor phase epitaxy; bevelled sample; double heterostructure; interface recombination; photoluminescence; Buffer layers; Epitaxial growth; Epitaxial layers; High speed optical techniques; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Photoluminescence; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380686

Filename

380686