Reactor design and improvement of uniformity in InP based OMVPE

Author

Pelzer, B. ; Michel, W. ; Lengeling, G. ; Strauch, G. ; Schmitz, D. ; Jürgensen, H.

Author_Institution

AIXTRON Semiconductor Technol. GmbH, Aachen, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

139

Lastpage

142

Abstract

A single wafer reactor AIX 200/4 with improved performance for InP based materials has been developed. The AIX 200/4 reactor is a horizontal OMVPE reactor. The new designed reactor follows the widely used AIX 200 reactor. Additionally, it offers an enlarged diameter and some new features to influence the layer uniformity. The considerations derived from the planetary multiwafer reactors leading to the new reactor design are presented and the experimental results are discussed. Also it could be demonstrated, that all processes from the AIX 200 reactors can be easily transferred to this new AIX 200/4 reactor

Keywords

III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; AIX 200 reactors; AIX 200/4 reactor; InP; OMVPE reactor; layer uniformity; planetary multiwafer reactors; Conductivity; Crystallization; Gallium arsenide; Indium phosphide; Inductors; Mass production; Production systems; Semiconductor materials; Steel; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380690

Filename

380690