• DocumentCode
    2500073
  • Title

    Dielectric and ferroelectric properties of BNT-based thin films by pulsed laser deposition

  • Author

    Hejazi, Mehdi ; Safari, Ahmad

  • Author_Institution
    Dept. of Mater. Sci. & Eng., state Univ. of New Jersey, Piscataway, NJ, USA
  • fYear
    2010
  • fDate
    9-12 Aug. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have studied the effect of laser repetition rate on the microstructure, crystallographic orientation, dielectric and ferroelectric properties of pulsed laser deposited 0.94(Bi0.5Na0.5)TiO3-0.04(Bi0.5K0.5)TiO3-0.02BaTiO3 thin films on SrRuO3 coated SrTiO3 substrates. The films were deposited at different repletion rates of 2 Hz, 4 Hz and 8 Hz, while the other processing parameters such as the substrate temperature and oxygen partial pressure were kept constant. It has been demonstrated that the film made at 4 Hz has been epitaxially grown on the substrate with a smooth and flawless surface and shows the best ferroelectric properties among the investigated films. The remnant polarization and dielectric constant for this film were measured to be 13.6 μC.cm-2 and 425 (at 1 MHz). The leakage current density of the optimized film is 1.3>;10-5 A.cm-2 at 320 kV.cm-1, which is about 3 orders of magnitude lower than those observed in the films prepared at repetition rates of 2 Hz and 8 Hz. The remnant polarizations for the films deposited at 2 Hz and 8 Hz were found to be 8.7 μC.cm-2 and 7.6 μC.cm-2, respectively.
  • Keywords
    barium compounds; bismuth compounds; crystal microstructure; current density; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; leakage currents; permittivity; potassium compounds; pulsed laser deposition; sodium compounds; BNT-based thin films; Bi0.5Na0.5TiO3-(Bi0.5K0.5)TiO3-BaTiO3; SrRuO3-SrTiO3; crystallographic orientation; dielectric constant; epitaxial growth; ferroelectric properties; flawless surface; frequency 1 MHz; frequency 2 Hz; frequency 4 Hz; frequency 8 Hz; leakage current density; microstructure; oxygen partial pressure; pulsed laser deposition; remnant polarization; substrate temperature; Bismuth; Films; Lead; BNT; lead-free piezoelectric; pulsed laser deposition; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics (ISAF), 2010 IEEE International Symposium on the
  • Conference_Location
    Edinburgh
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-8190-3
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2010.5712261
  • Filename
    5712261