Title :
Strain relaxation of Ga0.2In0.8As and InAs 0.5P0.5 layers grown on InP substrate for 1.6 to 2.4 μm spectral range GaxIn1-xAs/InAsy P1-y/InP photodiodes application
Author :
Kae-Nune, P. ; di Forte-Poisson, M.A. ; Brylinski, C. ; Persio, J. Di
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
Mismatched Ga1-xAs/InAsyP1-y/InP double heterostructures were prepared by the low pressure-metal-organic chemical vapor deposition (LP-MOCVD) epitaxial technique for optical photodiode application in the 1.6 μm-2.4 μm range. The required narrow band gap active layer consists of a high indium composition Ga 1-xInxAs (x = 0.8) layer. Different graded composition and superlattice buffer layers are investigated to accommodate the 1.8% lattice mismatch between InP and Ga0.2In 0.8As. It is shown that a two microns thick InAsyP 1-y graded composition layer (y up to 0.5) presents better optical and structural properties than a Ga1-xInxAs graded composition layer. High resolution X-ray diffraction investigations of an InAsyP1-y/Ga1-xI superlattice shows its good ability to act as a barrier to dislocation propagation
Keywords :
III-V semiconductors; X-ray diffraction; deformation; dislocation motion; gallium arsenide; indium compounds; narrow band gap semiconductors; optical properties; photodiodes; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; vapour phase epitaxial growth; 1.6 to 2.4 micron; Ga0.2In0.8As-InAs0.5P0.5-InP; X-ray diffraction; composition; dislocation propagation; heterostructures; lattice mismatch; low pressure-metal-organic chemical vapor deposition; narrow band gap active layer; optical properties; photodiodes; strain relaxation; structural properties; superlattice buffer layers; Buffer layers; Capacitive sensors; Chemical vapor deposition; Indium phosphide; Lattices; Narrowband; Optical buffering; Optical superlattices; Photodiodes; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380691
