Title :
Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 μm GaInAs/InP PiN photodiodes
Author :
di Forte-Poisson, M.A. ; Brylinski, C. ; Herbeaux, C. ; Androussi, Y. ; Lefebvre, A. ; Persio, J. Di ; Vassilakis, E. ; Herrbach, F. ; Carriére, C.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed
Keywords :
III-V semiconductors; chemical vapour deposition; crystal defects; gallium arsenide; indium compounds; interface states; interface structure; p-i-n photodiodes; semiconductor growth; semiconductor heterojunctions; surface structure; GaInAs-InP; PiN photodiodes; crystallographic properties; electrical properties; heterostructures; interfacial defects; low pressure-metal-organic chemical vapor deposition; switching sequences; Capacitance-voltage characteristics; Dark current; Degradation; Etching; Gain measurement; Indium phosphide; Metallization; Photodiodes; Silicon alloys; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380692
