• DocumentCode
    2500132
  • Title

    Influence of growth interruptions on the interface properties of InAsxP1-x/InP heterostructures grown by chemical beam epitaxy

  • Author

    Rossignol, V. ; Bensaoula, A. ; Freundlich, A. ; Bensaoula, A.H.

  • Author_Institution
    Space Vacuum Epitaxy Center, Houston Univ., TX, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    Chemical beam epitaxy has been shown to allow reproducible composition and thickness control in the growth of InAsxP1-x heterostructures. In a previous study the authors had defined a temperature window (440 C to 500 C) which allowed the attainment of high quality InAsP/InP strained multi quantum wells. Furthermore in the case of triethylindium/arsine-phosphine growth of InAsP, higher quality heterostructures could be obtained only with a no growth-interruption scheme. The study is extended to trimethylindium/arsine-phosphine growth of InAsP and the effects of growth interuptions were investigated on the heterostructures interface quality, thickness, and InAsP quantum well composition
  • Keywords
    III-V semiconductors; indium compounds; interface structure; semiconductor epitaxial layers; semiconductor quantum wells; stoichiometry; surface topography; 440 to 500 degC; InAsP-InP; chemical beam epitaxy; composition; interface quality; strained multi quantum wells; thickness; Automatic control; Chemicals; Epitaxial growth; Indium phosphide; Lattices; Molecular beam epitaxial growth; Reflection; Temperature control; Thickness control; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380693
  • Filename
    380693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2500132