Title :
Atomic layer epitaxy of InP and InAs/InP heterostructures
Author :
Tran, C.A. ; Masu, R.A. ; Brebner, J.L. ; Jouanne, M. ; Leonelli, R.
Author_Institution :
Dept. de Phys., Montrel Univ., Que., Canada
Abstract :
The samples used for this study were InAs/InP strained single quantum wells and strained superlattices (SLS) grown by atomic layer epitaxy (ALE). The growth of InAs on InP is strongly influenced by the large lattice mismatch (3.22%). High resolution X-ray diffraction (HRXRD) was carried out. HRXRD can be used to quickly and precisely evaluate the ALE self-limiting growth rate of both InP and InAs. Using interference of X-ray wave fields in a ALE grown InP with an InAs marker layer the authors have accurately determined the growth per cycle. Raman spectra of AL grown InAs/InP SLSs show clearly the longitudinal acoustical folded modes and the longitudinal optic confined modes for both InAs and InP layers. The results indicate that despite the 3.2% lattice mismatch, ALE is a powerful method for fabricating highly strained InAs/InP structures with atomically controlled heterointerfaces
Keywords :
III-V semiconductors; Raman spectra; X-ray diffraction; atomic layer epitaxial growth; indium compounds; interface phonons; phonons; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; InAs-InP; InP; Raman spectra; X-ray diffraction; atomic layer epitaxy; lattice mismatch; longitudinal acoustical folded modes; longitudinal optic confined modes; quantum wells; self-limiting growth rate; strained superlattices; Atom optics; Atomic layer deposition; Epitaxial growth; Indium phosphide; Interference; Laser sintering; Lattices; Optical superlattices; Strain control; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380697
