Ternary perovskite thin films for energy harvesting MEMS

The ferroelectric PZT thin films will be suitable for a fabrication of the piezoelectric energy harvesting (EH) MEMS due to their extremely high piezoelectric coefficients. However, at present the non-ferroelectric AlN thin films with a small piezoelectric coefficients are considered to be suitable for a fabrication of the piezoelectric EH MEMS due to their small dielectric constants. The high dielectric constants of the PZT thin films reduce the power output of the EH MEMS. In this paper it is shown the single crystal thin films of PZT-based ternary compounds Pb(Mn, Nb)O₃-PZT show high piezoelectric coefficients with small dielectric constants. Their output powers of the EH MEMS will be superior to the AlN thin film EH MEMS.