Title :
Quantum versus classical scattering time in liquid phase epitaxial Ga0.47In0.53As/InP
Author :
Pödör, B. ; Novikov, S.V. ; Savel´ev, I.G. ; Gombos, G.
Author_Institution :
Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
The authors present the results of Shubnikov m- effect measurements in two-dimensional electron gas in modulation-doped Ga0.47In0.53As/InP heterostructures grown by liquid phase epitaxy. Shubnikov-de Haas measurements were performed at 4.2 K temperature in magnetic fields up to 5.3 Tesla using a superconducting magnet system. From the magnetoresistance oscillation amplitudes the quantum scattering time and its ratio to the classical scattering time were deduced
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; gallium arsenide; indium compounds; quantum interference phenomena; semiconductor epitaxial layers; semiconductor heterojunctions; two-dimensional electron gas; 4.2 K; 5.3 T; Ga0.47In0.53As-InP; Shubnikov m- effect; Shubnikov-de Haas measurements; liquid phase epitaxy; magnetoresistance oscillation amplitudes; modulation doping; quantum scattering time; superconducting magnet; two-dimensional electron gas; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Magnetic field measurement; Particle scattering; Performance evaluation; Phase measurement; Superconducting magnets; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380699
