Title :
Hole capture cross section of the deep Ti donor level in InP
Author :
Scheffler, H. ; Baber, N. ; Dadgar, A. ; Wolf, T. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphysik, Tech. Univ. Berlin, Germany
Abstract :
The hole capture cross section σp of the deep Ti 3+/Ti4+ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. σp has been found to increase with temperature from 2.8 × 10-23 cm 2 at 100 K to 2.7 × 10-22 at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30±5) meV
Keywords :
III-V semiconductors; capacitance; deep levels; electron-phonon interactions; hole traps; indium compounds; phonon-phonon interactions; phonons; titanium; 100 to 300 K; InP:Ti; capacitance spectroscopy; capture barrier; deep level transient spectroscopy; donor level; hole capture cross section; isothermal capacitance; multiphonon emission; Capacitance measurement; Diodes; Doping; Fabrication; Gold; Indium phosphide; Iron; Isothermal processes; Ohmic contacts; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380700
